Datasheet

󱍦󰍷󰫥󱪪󰃅󱽆󰟵󰱾󳯅 www.szsgir.com SGPT5053C
SHENZHEN SHUGUAN ELECTRONIC TECHNOLOGY CO.,LTD. V1.0 2011.03.18
2
 Absolute Maximum Ratings (Ta=25)
Parameter Symbol Rating Units
Collector-Emitter Voltage V CEO 30 V
Emitter-Collector-Voltage V ECO 5 V
Collector Current I C 20 mA
Power Dissipation at (or below)
25 Free Air Temperature
Pc 75 mW
Lead Soldering Temperature Tsol 260 
Operating Temperature Topr -40 ~ +85 
Storage Temperature Tstg -40 ~ +85 
 Electro-Optical Characteristics (Ta=25)
Parameter Symbol Condition Min. Typ. Max. Units
Rang of Spectral Bandwidth λ
0.5
--- 400 -- 1100 nm
Wavelength of Peak Sensitivity λp --- -- 940 -- nm
Collector – Emitter
Breakdown Voltage
BV
CEO
I
C
=100µA
Ee=0mW/cm
2
30 -- -- V
Emitter-Collector
Breakdown Voltage
BV
ECO
I
E
=100µA
Ee=0mW/cm
2
5 -- -- V
Collector-Emitter
Saturation Voltage
V
CE(sat)
I
C
=2mA
Ee=1mW/cm
2
-- -- 0.2 V
Rise Time tr -- 15 -- µS
Fall Time
t
f
V
CE
=5V I
C
=1mA
RL=1000Ω
-- 15 -- µS
Collector Dark Current I
CEO
Ee=0mW/cm
2
V
CE
=20V
-- -- 100 nA
On State Collector Current I
C(on)
Ee=1mW/cm
2
V
CE
=5V
0.5 1.5 -- mA