Datasheet

VSMY1850ITX01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 30-Jun-16
2
Document Number: 84272
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
= 100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
190 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
-40 to +105 °C
Storage temperature range T
stg
-40 to +110 °C
Soldering temperature According to Fig. 7, J-STD-020 T
sd
260 °C
Thermal resistance junction / ambient JESD 51 R
thJA
270 K/W
0
20
40
60
80
100
120
140
160
180
200
0 153045607590105120
P
V
- Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
R
thJA
= 270 K/W
0
20
40
60
80
100
120
0 153045607590105120
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
R
thJA
= 270 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
- 1.65 1.9 V
I
F
= 1 A, t
p
= 100 μs V
F
-2.9- V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
--1.4-mV/K
I
F
= 10 mA TK
VF
--1.18-mV/K
Reverse current I
R
Not designed for reverse operation μA
Junction capacitance
V
R
= 0 V, f = 1 MHz,
E = 0 mW/cm
2
C
J
- 125 v pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
51015mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
-85-mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms φe-50-mW
Temperature coefficient of
radiant power
I
F
= 100 mA TKφ
e
--0.35- %/K
Angle of half intensity ϕ -± 60- deg
Peak wavelength I
F
= 100 mA λ
p
840 850 870 nm
Spectral bandwidth I
F
= 30 mA Δλ -30-nm
Temperature coefficient of λ
p
I
F
= 30 mA TK
λp
-0.25-nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
-10-ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
-10-ns
Virtual source diameter d - 0.5 - mm