Datasheet
VSMG2000X01, VSMG2020X01
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Jan-13
2
Document Number: 85194
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
170 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. figure 9, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21341
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21342
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.25 1.45 1.7 V
I
F
= 1 A, t
p
= 100 μs V
F
2.3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
I
F
= 100 mA TK
VF
- 1.1 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
20 40 60 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
350 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
e
40 mW
Temperature coefficient of
e
I
F
= 100 mA TK
e
- 0.35 %/K
Angle of half intensity ± 12 deg
Peak wavelength I
F
= 30 mA
p
830 850 870 nm
Spectral bandwidth I
F
= 30 mA 35 nm
Temperature coefficient of
p
I
F
= 30 mA TK
p
0.25 nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
20 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
20 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
23 MHz
Virtual source diameter d 1.5 mm