Datasheet

Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 [e-mail]
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T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Vishay Semiconductors
Fig. 31 - Recovery Time Characteristics
Fig. 32 - Recovery Charge Characteristics
Fig. 33 - Recovery Current Characteristics
Fig. 34 - Recovery Time Characteristics
Fig. 35 - Recovery Charge Characteristics
Fig. 36 - Recovery Current Characteristics
0.8
0.9
1
1.1
1.2
1.3
00101
100A
50A
200A
Ma ximum Reverse Re c ove ry Time - Trr (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 300A
T8 5 H F L . . S0 5
T = 1 2 5 ° C
FM
J
6
9
12
15
18
21
24
27
30
10 20 30 40 50 60 70 80 90 100
200A
Maximum Reverse Recovery Charge - Qrr (µC)
Ra t e O f Fa l l O f Fo rw a r d C u r r e n t - d i / d t ( A / µ s)
T8 5 H FL. . S0 5
T = 1 2 5 ° C
100A
50A
J
I = 300A
FM
10
15
20
25
30
35
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Maximum Reverse Rec overy Current - Irr (A)
Ra t e O f Fa l l O f Fo r w a r d C u rre n t - d i / d t ( A / µ s)
T8 5 H FL. . S0 5
T = 125°C
I = 300A
J
FM
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
00101
100A
50A
200A
Maximum Reverse Recovery Time - Trr (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
T8 5 H F L. . S1 0
T = 125°C
I = 300A
J
FM
10
15
20
25
30
35
40
45
50
55
10 20 30 40 50 60 70 80 90 100
200A
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
100A
50A
T8 5 H F L. . S1 0
T = 125°C
J
I = 300A
FM
15
20
25
30
35
40
45
50
55
60
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Ma ximum Reverse Re c overy Current - Irr (A)
I = 300A
T8 5 H FL. . S1 0
T = 125°C
Rate Of Fall Of Forward Current - di/dt (A/µs)
FM
J