Datasheet

Document Number: 94323 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 10 A
VS-STPS1045BPbF
Vishay Semiconductors
FEATURES
Popular D-PAK outline
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Compliant to RoHS Directive 2002/95/EC
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-STPS1045BPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and small foot prints on PC board. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
10 A
V
R
45 V
V
F
at I
F
0.57 V
I
RM
15 mA at 125 °C
T
J
max. 175 °C
Diode variation Single die
E
AS
20 mJ
Anode
1
3
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 10 A
V
RRM
45 V
I
FSM
t
p
= 5 μs sine 390 A
V
F
10 Apk, T
J
= 125 °C 0.57 V
T
J
Range - 40 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS1045BPbF UNITS
Maximum DC reverse voltage V
R
45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
I
F(AV)
50 % duty cycle at T
C
= 151 °C, rectangular waveform 10
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
390
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 3.0 A, L = 4.40 mH 20 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3.0 A

Summary of content (7 pages)