Datasheet
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4 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 31-Mar-11
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VS-MURD620CT-M3
Vishay Semiconductors
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
01
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
23
Square wave (D = 0.50)
Rated V
R
applied
4
5
120
02
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
13
1.0
2.0
4.5
3.0
4.0
RMS limit
4
5
3.5
2.5
1.5
0.5
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
20
40
V
R
= 30 V
T
J
= 125 °C
T
J
= 25 °C
30
50
10
I
F
= 3 A
I
F
= 6 A
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
40
I
F
= 6 A
I
F
= 3 A
140
100
V
R
= 30 V
T
J
= 125 °C
T
J
= 25 °C
80
120
0
20
60