Datasheet

Document Number: 93497 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Ultrafast Rectifier, 2 x 3 A FRED Pt
®
VS-MURD620CT-M3
Vishay Semiconductors
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Compliant to RoHS Directive 2002/95/EC
Halogen-free according to IEC 61249-2-21
definition
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION/APPLICATIONS
VS-MURD620CT-M3 is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
2 x 3 A
V
R
200 V
V
F
at I
F
1.0 V
t
rr
typ. See Recovery table
T
J
max. 175 °C
Diode variation Common cathode
Base
common
cathode
Common
cathode
2
4
13
Anode Anode
D-PAK (TO-252AA)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current per device I
F(AV)
Total device, rated V
R
, T
C
= 146 °C 6
ANon-repetitive peak surge current I
FSM
50
Peak repetitive forward current per diode I
FM
Rated V
R
, square wave, 20 kHz, T
C
= 146 °C 6
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 3 A - - 1.0
I
F
= 3 A, T
J
= 125 °C - - 0.96
I
F
= 6 A - - 1.2
I
F
= 6 A, T
J
= 125 °C - - 1.13
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 125 °C, V
R
= V
R
rated - - 250
Junction capacitance C
T
V
R
= 200 V - 12 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH

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