Datasheet

VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-11
4
Document Number: 94080
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
05
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
10 15 20
Square wave (D = 0.50)
Rated V
R
applied
25
01020
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
515
5
10
25
15
20
RMS limit
25
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
20
40
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
30
50
10
60
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
40
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
200
120
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
80
160
0