Datasheet

VS-MUR3020WTPbF, VS-MUR3020WT-N3
www.vishay.com
Vishay Semiconductors
Revision: 15-Aug-11
2
Document Number: 94080
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DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - - 35
nsT
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-22-
T
J
= 125 °C - 39 -
Peak recovery current I
RRM
T
J
= 25 °C - 1.6 -
A
T
J
= 125 °C - 4.1 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 19 -
nC
T
J
= 125 °C - 90 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
--1.5
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 40
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-6.0- g
-0.21- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC MUR3020WT