Datasheet

VS-MBRS190-M3, VS-MBRS1100-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Apr-2019
2
Document Number: 95744
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C 0.78
V
T
J
= 125 °C 0.62
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 1.0
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 42 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
-55 to +175 °C
Maximum thermal resistance, 
junction to lead
R
thJL
(2)
DC operation
See fig. 4
36
°C/W
Maximum thermal resistance, 
junction to ambient
R
thJA
DC operation 80
Approximate weight
0.10 g
0.003 oz.
Marking device Case style SMB (DO-214AA) 19/10
dP
tot
dT
J
-------------
1
R
thJA
--------------<