Datasheet

Document Number: 94304 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 [e-mail]
, [e-mail], [e-mail] 1
Schottky Rectifier, 16 A
VS-MBRB1635PbF, VS-MBRB1645PbF
Vishay Semiconductors
FEATURES
• 150 °C T
J
operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This VS-MBRB16... Schottky rectifier has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
16 A
V
R
35 V/45 V
I
RM
40 mA at 125 °C
D
2
PAK
Anode
1
3
Base
cathode
2
N/C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 16 A
V
RRM
35/45 V
I
FSM
t
p
= 5 μs sine 1800 A
V
F
16 Apk, T
J
= 125 °C 0.57 V
T
J
- 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB1635PbF VS-MBRB1645PbF UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 134 °C, rated V
R
16
A
Non-repetitive peak surge current I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
1800
Surge applied at rated load condition halfwave
single phase 60 Hz
150
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 3.6 A, L = 3.7 mH 24 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3.6 A