Datasheet

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, [e-mail], [e-mail] Revision: 23-Jun-10
VS-MBRB1635PbF, VS-MBRB1645PbF
Vishay Semiconductors
Schottky Rectifier, 16 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
16 A
T
J
= 25 °C 0.63
V
T
J
= 125 °C 0.57
Maximum instantaneous
reverse current
I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.2
mA
T
J
= 125 °C 40
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 1400 pF
Typical series inductance L
S
Measured lead from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 65 to 150
°C
Maximum storage temperature range T
Stg
- 65 to 175
Maximum thermal resistance,
junction to case
R
thJC
DC operation 1.50
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style D
2
PAK MBRB1645