Datasheet
Document Number: 94302 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 15-Mar-10 1
Schottky Rectifier, 10 A
VS-MBRB1035PbF, VS-MBRB1045PbF
Vishay High Power Products
FEATURES
• 150 °C T
J
operation
• TO-220 and D
2
PAK packages
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
10 A
V
R
35 V/45 V
I
RM
15 mA at 125 °C
D
2
PAK
Anode
1
3
Base
cathode
2
N/C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 10
A
I
FRM
T
C
= 135 °C 20
V
RRM
35/45 V
I
FSM
t
p
= 5 μs sine 1060 A
V
F
10 Apk, T
J
= 125 °C 0.57 V
T
J
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB1035PbF VS-MBRB1045PbF UNITS
Maximum DC reverse voltage V
R
35 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 135 °C, rated V
R
10
A
Peak repetitive forward current I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 135 °C 20
Non-repetitive surge current I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1060
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
150
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 4 mH 8 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A







