Datasheet

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Document Number: 94301
2 Revision: 04-Mar-10
VS-MBRA140TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(2)
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.55
V
2 A 0.71
1 A
T
J
= 100 °C
0.5
2 A 0.65
1 A
T
J
= 125 °C
0.49
2 A 0.63
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mAT
J
= 100 °C 10
T
J
= 125 °C 26
Threshold voltage V
F(TO)
T
J
= T
J
maximum 0.36 V
Forward slope resistance r
t
104 mΩ
Typical junction capacitance C
T
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz 38 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to lead
R
thJL
(2)
DC operation
See fig. 4
35
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
80
Approximate weight
0.07 g
0.002 oz.
Device marking Case style SMA (similar D-64) V14
dP
tot
dT
J
-------------
1
R
thJA
--------------<