Datasheet

VS-MBR7...PbF Series, VS-MBR7...-N3 Series
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Vishay Semiconductors
Revision: 30-Aug-11
2
Document Number: 94299
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
15 A T
J
= 25 °C 0.84
V7.5 A
T
J
= 125 °C
0.57
15 A 0.72
Maximum instantaneous reverse current I
RM
(1)
T
J
= 25 °C
Rated DC voltage
0.1
mA
T
J
= 125 °C 15
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 400 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
1000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 65 to 150
°C
Maximum storage temperature range T
Stg
- 65 to 175
Maximum thermal resistance,
junction to case
R
thJC
DC operation 3.0
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC
MBR735
MBR745