Datasheet

VS-MBR7...PbF Series, VS-MBR7...-N3 Series
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Vishay Semiconductors
Revision: 30-Aug-11
1
Document Number: 94299
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Schottky Rectifier, 7.5 A
FEATURES
• 150 °C T
J
operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-MBR7... Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
7.5 A
V
R
35 V, 45 V
V
F
at I
F
0.57 V
I
RM
max. 15 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
7 mJ
Anode
1
3
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 7.5 A
V
RRM
35/45 V
I
FSM
t
p
= 5 μs sine 690 A
V
F
7.5 A
pk
, T
J
= 125 °C 0.57 V
T
J
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR735PbF VS-MBR735-N3 VS-MBR745PbF VS-MBR745-N3 UNITS
Maximum DC reverse voltage V
R
35 35 45 45 V
Maximum working peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 131 °C, rated V
R
7.5 A
Non-repetitive peak surge current I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
690
A
Surge applied at rated load condition half wave
single phase 60 Hz
150
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH 7mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
2A