Datasheet

VS-MBR6045WTPbF, VS-MBR6045WT-N3
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Vishay Semiconductors
Revision: 30-Aug-11
2
Document Number: 94298
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1
V
FM
(1)
30 A
T
J
= 25 °C
0.62
V60 A 0.75
30 A T
J
= 125 °C 0.55
Maximum reverse leakage current per leg
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1
mA
T
J
= 125 °C 150
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.27 V
Forward slope resistance r
t
7.3 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 1400 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
See fig. 4
1.0
°C/W
Maximum thermal resistance,
junction to case per package
DC operation 0.5
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.24
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) MBR6045WT