Datasheet

VS-MBR4045WTPbF, VS-MBR4045WT-N3
www.vishay.com
Vishay Semiconductors
Revision: 30-Aug-11
2
Document Number: 94295
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
(1)
20 A
T
J
= 25 °C
0.59
V
40 A 0.78
20 A
T
J
= 125 °C
0.56
40 A 0.72
Maximum instantaneous reverse current I
RM
(1)
T
J
= 25 °C
Rated DC voltage
1.75
mAT
J
= 100 °C 50
T
J
= 125 °C 85
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.29 V
Forward slope resistance r
t
10.3 m
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 900 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 7.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 55 to 150
°C
Maximum storage temperature range T
Stg
- 55 to 175
Maximum thermal resistance,
junction to case per package
R
thJC
DC operation 1.4
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.7
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Device marking Case style TO-247AC (JEDEC) MBR4045WT