Datasheet

VS-HFA30PB120PbF, VS-HFA30PB120-N3
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Vishay Semiconductors
Revision: 17-Jul-13
4
Document Number: 94069
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Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
(Per Leg)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
(Per Leg)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt(Per Leg)
Fig. 9 - Reverse Recovery Parameter Test Circuit
0
100 150
dI
F
/dt (A/µs)
t
rr
(ns)
25
75
50
94069_05
100
125
150
175
200
225
250
275
300
200 250 300 350 400 450 500
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
0
100 150
dI
F
/dt (A/µs)
I
RRM
(A)
5
15
10
20
94069_06
25
30
35
200 250 300 350 400 450 500
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
V
rr
= 200 V
T
J
= 125 °C
T
J
= 25 °C
0
100 200
dI
F
/dt (A/µs)
Q
rr
(nC)
500
1500
1000
2000
94069_07
2500
3000
300 400 500
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
100
100 150
dI
F
/dt (A/µs)
900
94069_08
0
200
300
400
500
600
700
800
200 250 300 350 400 450 500
dI
(rec)M
/dt (A/µs)
V
rr
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 15 A
I
F
= 30 A
I
F
= 60 A
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust