Datasheet

VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
2
Document Number: 94069
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 1200 - -
V
Maximum forward voltage V
FM
I
F
= 30 A
See fig. 1
-2.44.1
I
F
= 60 A - 3.1 5.7
I
F
= 30 A, T
J
= 125 °C - 2.3 4.0
Maximum reverse 
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-1.340
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 1100 4000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 50 75 pF
Series inductance L
S
Measured lead to lead 5 mm from package
body
-8.0-nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 47 -
nst
rr1
T
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
- 110 170
t
rr2
T
J
= 125 °C - 170 260
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 10 15
A
I
RRM2
T
J
= 125 °C - 16 24
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 650 980
nC
Q
rr2
T
J
= 125 °C - 1540 2310
Peak rate of fall of recovery
current during t
b

See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 270 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 240 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance, 
junction to case
R
thJC
--0.36
°C/W
Thermal resistance, 
junction to ambient
R
thJA
Typical socket mount - - 80
Thermal resistance, 
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.50 -
Weight
- 5.61 - g
- 0.198 - oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC modified (JEDEC) HFA30PB120