Datasheet

VS-HFA25TB60PbF, VS-HFA25TB60-N3
www.vishay.com
Vishay Semiconductors
Revision: 02-Dec-11
4
Document Number: 94065
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Fig. 9 - Reverse Recovery Parameter Test Circuit
t
rr
(ns)
dI
F
/dt (A/µs)
100 1000
20
140
100
120
40
60
80
94065_05
I
F
= 50 A
I
F
= 25 A
I
F
= 10 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
RR
(A)
dI
F
/dt (A/µs)
100 1000
0
30
20
25
5
10
15
94065_06
I
F
= 20 A
I
F
= 25 A
I
F
= 10 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
Q
rr
(nC)
dI
F
/dt (A/µs)
100 1000
0
1400
1000
200
400
600
1200
800
94065_07
I
F
= 50 A
I
F
= 25 A
I
F
= 10 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
dI
(rec)M
/dt (A/µs)
dI
F
/dt (A/µs)
100 1000
100
10 000
1000
94065_08
I
F
= 50 A
I
F
= 25 A
I
F
= 10 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust