Datasheet

VS-HFA16TB120PbF, VS-HFA16TB120-N3
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Vishay Semiconductors
Revision: 18-Aug-11
4
Document Number: 94060
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Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt (Per Leg)
Fig. 6 - Typical Recovery Current vs. di
F
/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt (Per Leg)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt (Per Leg)
270
100
1000
dI
F
/dt (A/µs)
t
rr
(ns)
20
120
70
170
94060_05
220
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
I
RR
(A)
dI
F
/dt (A/µs)
100 1000
0
30
10
15
20
25
5
94057_06
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
Q
rr
(nC)
dI
F
/dt (A/µs)
100 1000
0
1600
1400
400
800
1200
200
600
1000
94057_07
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
dI
(rec)M
/dt (A/µs)
dI
F
/dt (A/µs)
100 1000
10
10 000
100
1000
94057_08
I
F
= 16 A
I
F
= 8 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C