Datasheet

VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-11
2
Document Number: 94054
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 15 A
See fig. 1
-1.31.7
I
F
= 30 A - 1.5 2.0
I
F
= 15 A, T
J
= 125 °C - 1.2 1.6
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
See fig. 2
-1.010
μA
- 400 1000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 25 50 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 23 -
nst
rr1
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-5060
t
rr2
T
J
= 125 °C - 105 120
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 4.5 6.0
A
I
RRM2
T
J
= 125 °C - 6.5 10
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 84 180
nC
Q
rr2
T
J
= 125 °C - 241 600
Peak rate of fall of recovery
current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 188 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 160 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--1.7
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Marking device
Case style D
2
PAK HFA15TB60S
Case style TO-262 HFA15TB60-1