Datasheet

VS-HFA15TB60PbF
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Vishay Semiconductors
Revision: 06-Jun-11
4
Document Number: 94053
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Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
80
40
0
100
1000
dI
F
/dt (A/µs)
t
rr
(ns)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
60
20
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
100
20
15
0
100
1000
dI
F
/dt (A/µs)
I
rr
(A)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
5
10
25
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
800
0
100
1000
dI
F
/dt (A/µs)
Q
rr
(nC)
600
200
400
100
300
500
700
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
10 000
1000
100
1000
dI
F
/dt (A/µs)
dI
(rec)M
/dt (A/µs)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
100
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A