Data Sheet

VS-HFA08TB60PbF, VS-HFA08TB60-N3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
4
Document Number: 94047
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
80
40
0
100
1000
dI
F
/dt (A/µs)
t
rr
(ns)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
60
20
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
20
15
0
100
1000
dI
F
/dt (A/µs)
I
rr
(A)
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
5
10
500
0
100
1000
dI
F
/dt (A/µs)
Q
rr
(nC)
300
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
100
400
200
10 000
1000
100
1000
dI
F
/dt (A/µs)
dI
(rec)M
/dt (A/µs)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
I
F
= 4 A
100