Data Sheet

VS-HFA08TB60PbF, VS-HFA08TB60-N3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
2
Document Number: 94047
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 8.0 A
See fig. 1
-1.41.7
I
F
= 16 A - 1.7 2.1
I
F
= 8.0 A, T
J
= 125 °C - 1.4 1.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
See fig. 2
-0.35.0
μA
- 100 500
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 10 25 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 18 -
nst
rr1
T
J
= 25 °C
I
F
= 8.0 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-3755
t
rr2
T
J
= 125 °C - 55 90
Peak recovery current
I
RRM1
T
J
= 25 °C - 3.5 5.0
A
I
RRM2
T
J
= 125 °C - 4.5 8.0
Reverse recovery charge
Q
rr1
T
J
= 25 °C - 65 138
nC
Q
rr2
T
J
= 125 °C - 124 360
Peak rate of fall of recovery
current during t
b
dI
(rec)M
/dt1 T
J
= 25 °C - 240 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 210 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--3.5
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AC HFA08TB60