Datasheet

VS-HFA08TB120PbF, VS-HFA08TB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 18-Aug-11
2
Document Number: 94045
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ELECTRIACL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 1200 - -
V
Maximum forward voltage V
FM
I
F
= 8.0 A - 2.6 3.3
I
F
= 16 A - 3.4 4.3
I
F
= 8.0 A, T
J
= 125 °C - 2.4 3.1
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated - 0.31 10
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 135 1000
Junction capacitance C
T
V
R
= 200 V - 11 20 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 28 -
nst
rr1
T
J
= 25 °C
I
F
= 8.0 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-6395
t
rr2
T
J
= 125 °C - 106 160
Peak recovery current
I
RRM1
T
J
= 25 °C - 4.5 8.0
A
I
RRM2
T
J
= 125 °C - 6.2 11
Reverse recovery charge
Q
rr1
T
J
= 25 °C - 140 380
nC
Q
rr2
T
J
= 125 °C - 335 880
Peak rate of recovery current
during t
b
dI
(rec)M
/dt1 T
J
= 25 °C - 133 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 85 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
--1.7
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 40
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.25 -
Weight
-6.0- g
-0.21- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AC HFA08TB120