Datasheet

VS-HFA08TA60CPbF, VS-HFA08TA60C-N3
www.vishay.com
Vishay Semiconductors
Revision: 22-Jul-14
2
Document Number: 94043
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ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 4.0 A
See fig. 1
-1.51.8
I
F
= 8.0 A - 1.8 2.2
I
F
= 4.0 A, T
J
= 125 °C - 1.4 1.7
Maximum reverse 
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
- 0.17 3.0
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 44 300
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 4.0 8.0 pF
Series inductance L
S
Measured lead to lead 5 mm from package
body
-8.0-nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 6 and 16
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 17 -
nst
rr1
T
J
= 25 °C
I
F
= 4.0 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-2842
t
rr2
T
J
= 125 °C - 38 57
Peak recovery current
See fig. 7 and 8
I
RRM1
T
J
= 25 °C - 2.9 5.2
A
I
RRM2
T
J
= 125 °C - 3.7 6.7
Reverse recovery charge
See fig. 9 and 10
Q
rr1
T
J
= 25 °C - 40 60
nC
Q
rr2
T
J
= 125 °C - 70 105
Peak rate of fall of recovery
current during t
b

See fig. 11 and 12
dI
(rec)M
/dt1 T
J
= 25 °C - 280 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 235 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance, 
junction to case
R
thJC
--5.0
K/W
Thermal resistance, 
junction to ambient
R
thJA
Typical socket mount - - 80
Thermal resistance, 
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AB HFA08TA60C