Datasheet

VS-HFA06TB120PbF, VS-HFA06TB120-N3
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Vishay Semiconductors
Revision: 17-Aug-11
4
Document Number: 94038
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Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
110
90
20
100
1000
dI
F
/dt (A/µs)
t
rr
(ns)
60
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
100
40
80
30
50
70
I
F
= 6 A
I
F
= 4 A
25
20
0
100
1000
dI
F
/dt (A/µs)
I
rr
(A)
10
I
F
= 6 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
5
15
1000
800
100
1000
dI
F
/dt (A/µs)
Q
rr
(nC)
I
F
= 6 A
I
F
= 4 A
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
400
200
600
0
1000
100
100
1000
dI
F
/dt (A/µs)
dI
(rec)M
/dt (A/µs)
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 6 A
I
F
= 4 A
10 000
10