Owner manual

Preliminary
VS-GT100TP060N
www.vishay.com
Vishay Semiconductors
Revision: 13-Dec-11
4
Document Number: 93799
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
I
C
(A)
V
CE
(V)
0100 300200 400 500 700600
0
50
100
150
200
250
R
G
= 2.2 Ω
V
GE
= ± 15 V
T
J
= 125 °C
Module
0.01
0.1
1
0.001 0.01 0.1 1 10
t (s)
Z
thJC
(K/W)
IGBT
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2
25 °C
125 °C
V
F
(V)
I
F
(A)
0
0.5
1
1.5
2
2.5
0 50 100 150 200
E
REC
I
F
(A)
E (mJ)
V
CC = 300 V
R
G
= 2.2 Ω
V
GE
= - 15 V
T
J
= 125 °C