Owner manual

Preliminary
VS-GT100TP060N
www.vishay.com
Vishay Semiconductors
Revision: 13-Dec-11
3
Document Number: 93799
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Fig. 1 - IGBT Typical Output Characteristics
Fig. 2 - IGBT Transfer Characteristics
Fig. 3 - IGBT Switching Loss vs. I
C
Fig. 4 - IGBT Switching Loss vs. R
G
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature T
J
- - 175
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case
IGBT
R
thJC
- - 0.36
K/WDiode - - 0.57
Case to sink (Conductive grease applied) R
thCS
-0.05-
Mounting torque
Power terminal screw: M5 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight - 150 - g
I
C
(A)
V
CE
(V)
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2 2.5 3 3.5
175 °C
25 °C
V
GE
= 15 V
0
25
50
75
100
125
150
175
200
45678910
25 °C
175 °C
V
CE
= 50 V
V
GE
(V)
I
C
(A)
0 50 100 150 200
I
C
(A)
E (mJ)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
CC = 300 V
R
G
= 2.2 Ω
V
GE
= ± 15 V
T
J
= 125 °C
E
ON
E
OFF
E (mJ)
R
g
(Ω)
E
on
E
off
0
1
2
3
4
5
6
7
0 1020304050
V
CC = 300 V
I
C
= 100 A
V
GE
= ± 15 V
T
J
= 125 °C