Datasheet

VS-ETU1506-M3,VS-ETU1506FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 09-Nov-11
2
Document Number: 93534
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 24 28
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 36 47
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-40-
T
J
= 125 °C - 87 -
Peak recovery current I
RRM
T
J
= 25 °C - 5 -
A
T
J
= 125 °C - 9 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 107 -
nC
T
J
= 125 °C - 430 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
-53-ns
Peak recovery current I
RRM
-25- A
Reverse recovery charge Q
rr
-730- nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
-1.21.4
°C/W
FULL-PAK - 3.7 4.3
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2-g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style 2L TO-220AC ETU1506
Case style 2L TO-220 FULL-PAK ETU1506FP