Datasheet

VS-ETL1506S-M3, VS-ETL1506-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 19-Apr-11
2
Document Number: 93579
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 60 110
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 185 270
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
- 210 -
T
J
= 125 °C - 290 -
Peak recovery current I
RRM
T
J
= 25 °C - 20 -
A
T
J
= 125 °C - 26 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 2.2 -
μC
T
J
= 125 °C - 4.0 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance, junction to case R
thJC
-1.31.51°C/W
Thermal resistance, junction to ambient R
thJA
Typical socket mount - - 70
Thermal resistance, case to heatsink R
thCS
Mounting surface, flat, smooth and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK modified ETL1506S
Case style TO-262 ETL1506-1
V
FM
- Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
10
100
T
J
= 25 °C
T
J
= 150 °C
T
J
= 175 °C
I
R
- Reverse Current (μA)
100 200 300 400 500 600
0.0001
0.001
0.01
0.1
1
10
100
150 °C
175 °C
25 °C
50 °C
75 °C
125 °C
100 °C
V
R
- Reverse Voltage (V)