Datasheet

VS-ETL0806-M3, VS-ETL0806FP-M3
www.vishay.com
Vishay Semiconductors
Revision: 16-Apr-14
2
Document Number: 93528
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DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 65 100
ns
I
F
= 8 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 150 250
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
- 180 -
T
J
= 125 °C - 240 -
Peak recovery current I
RRM
T
J
= 25 °C - 15 -
A
T
J
= 125 °C - 19 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 1500 -
nC
T
J
= 125 °C - 2400 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case
R
thJC
-2.02.6
°C/W
FULL-PAK - 4.6 5.5
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2-g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style 2L TO-220AC ETL0806
Case style 2L TO-220 FULL-PAK ETL0806FP