Datasheet

VS-ETH3006S-M3, VS-ETH3006-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 21-Apr-11
4
Document Number: 93574
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Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
t
rr
(ns)
I
F
= 30 A, 125 °C
I
F
= 30 A, 25 °C
typical value
dI
F
/dt (A/μs)
10
20
30
40
50
60
70
80
90
100 1000
Q
rr
(nC)
I
F
= 30 A, 125 °C
I
F
= 30 A, 25 °C
typical value
dI
F
/dt (A/μs)
10
0
200
300
400
500
600
700
800
900
100 1000
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr