Datasheet

VS-ETH3006S-M3, VS-ETH3006-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 21-Apr-11
2
Document Number: 93574
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 26 35
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-26-
T
J
= 125 °C - 70 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.5 -
A
T
J
= 125 °C - 7.6 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 50 -
nC
T
J
= 125 °C - 280 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case
R
thJC
- 0.95 1.4 °C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK modified ETH3006S
Case style TO-262 ETH3006-1
V
FM
- Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
1
10
100
1000
T
J
= 25 °C
T
J
= 150 °C
T
J
= 175 °C
0 100 200 300 400 500 600
0.0001
0.001
0.01
0.1
1
10
100
1000
150 °C
175 °C
25 °C
50 °C
75 °C
125 °C
100 °C
Reverse Current - I
R
(μA)
Reverse Voltage - V
R
(V)