Datasheet

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, [e-mail], [e-mail] Revision: 18-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETH3006-M3, VS-ETH3006FP-M3
Vishay Semiconductors
Hyperfast Rectifier, 30 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 26 35
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-26-
T
J
= 125 °C - 70 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.5 -
A
T
J
= 125 °C - 7.6 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 50 -
nC
T
J
= 125 °C - 280 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
- 0.84 1.3
°C/W
FULL-PAK - 3.2 3.8
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2-g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style 2L TO-220AC ETH3006
Case style 2L TO-220 FULL-PAK ETH3006FP