Datasheet

VS-ETH1506S-M3, VS-ETH1506-1-M3
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Vishay Semiconductors
Revision: 28-Sep-12
4
Document Number: 93573
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
0 2 4 6 8 10 12 14 16 18 20 22
120
130
140
150
160
170
180
DC
Average Forward Current - I
F(AV)
(A)
Allowable Case Temperature (°C)
0 5 10 15 20 25
0
5
10
15
20
25
30
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
t
rr
(ns)
I
F
= 15 A, 125 °C
I
F
= 15 A, 25 °C
typical value
10
20
30
40
50
60
70
80
90
100
100 1000
dI
F
/dt (A/μs)
dI
F
/dt (A/μs)
I
F
= 15 A, 125 °C
I
F
= 15 A, 25 °C
typical value
Q
rr
( nC )
100 1000
0
100
200
300
400
500
600