Datasheet

VS-ETH1506S-M3, VS-ETH1506-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-12
2
Document Number: 93573
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 21 26
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 25 36
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-29-
T
J
= 125 °C - 65 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.9 -
A
T
J
= 125 °C - 7.0 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 60 -
nC
T
J
= 125 °C - 240 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
-42-ns
Peak recovery current I
RRM
-21- A
Reverse recovery charge Q
rr
- 480 - nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
-1.31.51°C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK modified ETH1506S
Case style TO-262 ETH1506-1