Datasheet

VS-EPU6006-N3, VS-APU6006-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
4
Document Number: 94794
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
; 
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
020406080100
70
80
90
100
110
120
130
140
150
160
170
180
DC
Square wave (d = 0.5)
rated V
R
applied
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0 20 40 60 80 100
0
20
40
60
80
100
120
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
t
rr
(ns)
dI
F
/dt (A/µs)
0001001
40
60
80
100
120
140
160
180
200
220
240
260
I
F
= 60 A, 125 °C
I
F
= 60 A, 25 °C
Q
rr
(nC)
dI
F
/dt (A/µs)
0001001
0
500
1000
1500
2000
2500
3000
3500
4000
4500
I
F
= 60 A, 125 °C
I
F
= 60 A, 25 °C
typical value