Datasheet

VS-EPU6006-N3, VS-APU6006-N3
www.vishay.com
Vishay Semiconductors
Revision: 17-Jul-13
2
Document Number: 94794
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 32 43
nsT
J
= 25 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
- 110 -
T
J
= 125 °C - 200 -
Peak recovery current I
RRM
T
J
= 25 °C - 10 -
A
T
J
= 125 °C - 19 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 530 -
nC
T
J
= 125 °C - 1900 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
- - 0.65
°C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-6-g
-0.21- oz.
Mounting torque
6
(5)
-
1.2
(10)
kgf. cm
(lbf  in)
Marking device
Case style TO-247AC modified EPU6006
Case style TO-247AC APU6006