Datasheet

New Product
VS-APH3006-F3, VS-APH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3
www.vishay.com
Vishay Semiconductors
Revision: 05-Apr-12
2
Document Number: 93571
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DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 26 35
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-26-
T
J
= 125 °C - 70 -
Peak recovery current I
RRM
T
J
= 25 °C - 3.5 -
A
T
J
= 125 °C - 7.6 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 50 -
nC
T
J
= 125 °C - 280 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
-0.71.1°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-5.5- g
-0.2-oz.
Mounting torque
1.2
(10)
-
2.4
(20)
kgf · cm
(lbf · in)
Marking device
Case style TO-247AC APH3006
Case style TO-247AC modified EPH3006