Datasheet

VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
Vishay Semiconductors
Revision: 18-Dec-13
1
Document Number: 93383
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High Voltage Surface Mountable Input Rectifier Diode, 8 A
FEATURES
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
The VS-8EWS..S-M3 rectifier high voltage series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
The high reverse voltage range available allows design of
input stage primary rectification with outstanding voltage
surge capability. 
Note
•T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2

PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
8 A
V
R
800 V, 1200 V
V
F
at I
F
1.1 V
I
FSM
150 A
T
J
max. 150 °C
Diode variation Single die
Base
cathode
+
2
13
A
node
--
Anode
1
2
3
D-PAK
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
1.2 1.6
A
Aluminum IMS, R
thCA
= 15 °C/W 2.5 2.8
Aluminum IMS with heatsink, R
thCA
= 5 °C/W 5.5 6.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 8 A
V
RRM
800/1200 V
I
FSM
150 A
V
F
8 A, T
J
= 25 °C 1.10 V
T
J
-55 to 150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-8EWS08S-M3 800 900
0.5
VS-8EWS12S-M3 1200 1300