Datasheet

VS-8EWL06FN-M3
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Vishay Semiconductors
Revision: 05-Apr-11
4
Document Number: 93240
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Average Forward Current - I F
(AV)
(A)
Allowable Case Temperature (°C)
0 2 4 6 8 10 12 14
120
130
140
150
160
170
180
DC
see note (1)
Square wave (D=0.50)
rated Vr applied
Average Power Loss ( Watts )
Average Forward Current - IF
(AV)
(A)
024681012
0
2
4
6
8
10
12
14
16
18
20
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
RMS Limit
DC
trr ( ns )
di
F
/dt (A/μs )
0001001
0
50
100
150
200
250
300
350
8A, Tj = 25°C
8A, Tj = 125°C
Qrr ( nC )
di
F
/dt (A/μs )
0001001
0
500
1000
1500
2000
2500
3000
3500
8A, Tj = 25°C
8A, Tj = 125°C