Datasheet

VS-8EWL06FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 05-Apr-11
2
Document Number: 93240
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DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 87 -
ns
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 60 100
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
- 170 -
T
J
= 125 °C - 250 -
Peak recovery current I
RRM
T
J
= 25 °C - 15 -
A
T
J
= 125 °C - 20 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 1.3 -
uC
T
J
= 125 °C - 2.6 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - +175 °C
Thermal resistance,
junction to case per leg
R
thJC
-1.82.2°C/W
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (TO-252AA) 8EWL06FN