Datasheet

VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
www.vishay.com
Vishay Semiconductors
Revision: 18-Dec-13
4
Document Number: 93375
For technical questions within your region: [e-mail]
, [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
1
10
100
0.5 1 1.5 2 2.5 3
T = 2 5 ° C
J
Instantaneous Forward Current (A)
In st a n t a n e o u s Fo rw a r d V o l t a g e ( V )
T = 1 5 0 ° C
J
8EWF..S Series
0
0.1
0.2
0.3
0.4
0 40 80 120 160 200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
1 A
5 A
10 A
Typical Reverse Recovery Time - Trr (µs)
8EWF..S Se rie s
T = 2 5 ° C
J
I = 20 A
FM
8 A
2 A
0
0.1
0.2
0.3
0.4
0 40 80 120 160 200
Ra te Of Fa ll Of Fo rwa rd Curre n t - d I/ d t (A / µs)
1 A
5 A
10 A
Typical
Re verse Rec overy Time - Trr (µs)
8EWF..S Series
T = 150 °C
J
I = 20 A
FM
2 A
8 A
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 40 80 120 160 200
Rate Of Fall Of Forward Current - dI/dt (A/µs)
1 A
5 A
10 A
Typical
Reverse Recovery Charge - Qrr (µC)
8EWF..S Series
T = 2 5 ° C
I = 20 A
FM
2 A
J
8 A
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 40 80 120 160 200
Rate Of Fall Of Forward Current - dI/dt (A/µs)
1 A
5 A
10 A
Typical
Reverse Recovery Charge - Qrr (µC)
8 EW F. . S Se r i e s
T = 150 °C
J
I = 20 A
FM
2 A
8 A
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200
Typical
Reverse Re c overy Current - Irr (A)
Rate Of Fall Of Forward Current - dI/ dt (A/µs)
1 A
5 A
10 A
8EWF..S Se ries
T = 2 5 ° C
J
I = 20 A
FM
2 A
8 A