Datasheet

VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
www.vishay.com
Vishay Semiconductors
Revision: 18-Dec-13
2
Document Number: 93375
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Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
8 A, T
J
= 25 °C 1.2 V
Forward slope resistance r
t
T
J
= 150 °C
16 m
Threshold voltage V
F(TO)
1.13 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 3
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 1 Apk
100 A/μs
T
J
= 25 °C
55
ns
I
F
at 8 Apk
25 A/μs
T
J
= 25 °C
200
Reverse recovery current I
rr
2.6 A
Reverse recovery charge Q
rr
0.25 μC
Snap factor S 0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage 
temperature range
T
J
, T
Stg
-40 to 150
°C
Soldering temperature T
S
For 10 seconds 260
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
R
thJA
(1)
50
Approximate weight
1g
0.03 oz.
Marking device Case style TO-252AA (D-PAK)
8EWF02S
8EWF04S
8EWF06S
I
FM
t
rr
di
dt
I
rr
Q
rr
t
t
a
t
b