Datasheet

VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
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Vishay Semiconductors
Revision: 02-Jan-12
4
Document Number: 94026
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Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
02 6 1012
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
120
140
48
150
160
170
180
130
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
02 6 10 14
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
80
100
48
120
140
160
180
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
12
02 6 1012
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
4
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
48
8
12
16
20
18
14
10
6
2
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
60
10
I
F
= 16 A
I
F
= 8 A
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
50
40
30
20
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
400
0
I
F
= 16 A
I
F
= 8 A
300
200
100
50
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
350
250
150