Datasheet

VS-8ETH06PbF, VS-8ETH06-N3, VS-8ETH06FPPbF, VS-8ETH06FP-N3
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Vishay Semiconductors
Revision: 02-Jan-12
2
Document Number: 94026
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 18 22
ns
I
F
= 8 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 20 25
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-25-
T
J
= 125 °C - 40 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.4 -
A
T
J
= 125 °C - 4.8 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 25 -
nC
T
J
= 125 °C - 120 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
-33-ns
Peak recovery current I
RRM
-12- A
Reverse recovery charge Q
rr
- 220 - nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case
R
thJC
-1.42
°C/W
(FULL-PAK) - 3.4 4.3
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style TO-220AC 8ETH06
Case style TO-220 FULL-PAK 8ETH06FP
1
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
0
1
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
23
4
0.1
0.01
0.1
1
10
100
0 200 400
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
300
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
100
0.001
1000
600500