Datasheet

VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com
Vishay Semiconductors
Revision: 06-Feb-14
1
Document Number: 94345
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High Voltage Input Rectifier Diode, 60 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Designed and qualified according to
JEDEC
®
-JESD47
• Material categorization: 
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).

PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
60 A
V
R
800 V to 1200 V
V
F
at I
F
1.09 V
I
FSM
1000 A
T
J
max. 150 °C
Diode variation Single die
Base
cathode
2
1 3
Anode
Cathode
1
2
3
TO-247AC modified
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 60 A
V
RRM
800/1200 V
I
FSM
1000 A
V
F
60 A, T
J
= 25 °C 1.09 V
T
J
-40 to 150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-60EPS08PbF, VS-60EPS08-M3 800 900
1
VS-60EPS12PbF, VS-60EPS12-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 118 °C, 180° conduction half sine wave 60
A
Maximum peak one cycle 
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 840
10 ms sine pulse, no voltage reapplied 1000
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 3530
A
2
s
10 ms sine pulse, no voltage reapplied 4220
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 42 200 A
2
s